面向低功耗数字电路应用的多晶锗硅纳机电开关研究

项目名称： 面向低功耗数字电路应用的多晶锗硅纳机电开关研究

项目编号： No.61204123

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 粟雅娟

作者单位： 中国科学院微电子研究所

项目金额： 32万元

中文摘要： 纳机电开关具有零漏电流、超低次临界斜率的特性，是构建纳米尺度低功耗数字集成电路理想的替代和补充器件。但目前纳机电开关在工艺兼容性、电学参数及可靠性上，距离纳米尺度数字电路的需求还存在较大差距。本项目拟开展面向低功耗数字电路应用的多晶锗硅横向纳机电开关相关研究：采用后梁工艺结合优化的横向结构实现驱动电极与梁间的小尺寸间距，以降低启动电压；利用侧壁金属层方案减小导通电阻，同时通过驱动电极与悬臂梁错位的方法避免粘附，以提高器件可靠性；基于有限元分析评估器件性能，优化器件结构参数，并建立电路仿真宏模型，利用宏模型评估该器件所构造电路的性能；采用多层工艺，利用低压化学气相淀积技术，制备低应力多晶锗硅薄膜，探索与CMOS兼容的多晶锗硅纳机电开关低温制造工艺，研制和测试多晶锗硅纳机电开关。研究结果将为面向低功耗数字电路应用的纳机电开关奠定器件、模型及工艺基础，为突破纳米尺度集成电路的功耗瓶颈提供新途径。

中文关键词： 纳机电开关；阈值电压；后梁工艺；工艺兼容性；低功耗

英文摘要： Due to zero leakage current and unlimited subthreshold slope, nano　electro-mechanical relay(NEMS relay) is the ideal candidate of device constructing nanometer low power digital circuit. Nowadays NEMS relay can't be integrated with digital integrate circuit smoothly because there still exists a great gap between fabrication process，electrical parameters and reliability of NEMS Relay and the reqirement of digital integrate circuit. Research of poly SiGe NEMS Relay oriented to low power digital circuits application is proposed in this project: nanometer gap is realized by last beam process combined with optimal lateral device structure, consequently actuate voltage of NEMS Relay can be reduce to fit the requirement of nanometer digtal circuits. The scheme of metal covering on sidewall can reduce on resistance of the device, meanwhile misplace of gate electrode and beam intentionally can avoid adhesion effectively thus the reliability of the NEMS Relay is improved. Based on the FEA method the mechanical and electrical characteristics of the NEMS Relay are estimated and device parameters are optimized, accordingly macro device model of the NEMS Relay is built, combined with circuit simulation tools the efficiency of NEMS Relay of reducing power consumption of circuits is evaluated. LPCVD technique is utilized to fa

英文关键词： NEMS；Threshold Voltage；Beam-Last Process；Process Compatibility；Low Power