宽带隙半导体激光器件关键科学问题研究

项目名称： 宽带隙半导体激光器件关键科学问题研究

项目编号： No.61223005

项目类型： 专项基金项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 杜国同

作者单位： 吉林大学

项目金额： 300万元

中文摘要： GaN、ZnO基材料是典型的宽禁带半导体，它们具有直接跃迁能带结构，是制备半导体激光器件的理想材料。通过调整其禁带宽度，可以实现紫外、紫、蓝及绿色激光器件。在高清晰激光显示，高密度光存储，生物医疗以及水下和空间光通信等民用和军事方面有着广阔的应用前景。虽然，国外已有GaN蓝光激光器出售，但是从宽带隙半导体GaN、ZnO材料系激光器研究方面整体水平来看，我国内地和国际、境外差距不大；在ZnO材料系及激光器方面我国和国际研究是同步的，有些研究结果甚至领先于国外；为此我们开展宽禁带半导体激光器的创新研制，开展载流子局域发光中心的微观结构和 InGaN 量子结构发光的本质，GaN和ZnO材料的P型掺杂机理及ZnO电注入激子发光动力学等一些关键科学问题研究，如取得突破，将大大促进我国宽带半导体激光器件的发展，对相关产业的发展也有重要推动作用, 具有重要的科学意义和重大的经济和社会效益。

中文关键词： 宽带半导体；材料生长；激光器；GaN；ZnO

英文摘要： GaN and ZnO based materials are typical wide-band semiconductors. With direct-band gap , they are very suitable for lasers fabrication. Using band tuning technic , it is expected to achieve ultraviolet, purple, blue and green laser, which are very promising in high definition laser displaying, high density light storage, bio-medical treatment, underwater and space light communication, both for civil use and military area.Indeed, GaN based blue laser is already commercial in some countries. But considering the GaN and ZnO based materials and related lasing devices as a big whole research field, there is not much difference in the research capability of this area between our country and others. And particularly, in the area of ZnO related material and lasing device , we are at the same level with the world .In some specific regions of the ZnO related research area, we even stand one step further. Thus, we should promote research in regions ,such as innovation project of wide band gap semiconductor laser, micro-structure of localized carrier recombination center, luminenscence origin of InGaN quantum structure , P-type doping mechanism of GaN and ZnO, exciton radiative recombination mechanics under electrical injection in ZnO. These regions are very critical, in which, once got break through development , the

英文关键词： Key Words: wide bandgap semiconductor；material growth；laser devices；GaN；ZnO