基于IGZO－TFT的集成电路研究

项目名称： 基于IGZO－TFT的集成电路研究

项目编号： No.61274084

项目类型： 面上项目

立项/批准年度： 2013

项目学科： 无线电电子学、电信技术

项目作者： 张盛东

作者单位： 北京大学

项目金额： 83万元

中文摘要： 近年来基于一种新的氧化物半导体材料（铟镓锌氧，IGZO）的薄膜晶体管（TFT）的出现，使得基于TFT的高性能低成本集成电路的实现成为可能。本项目从平板显示和集成电路的内在要求出发并结合IGZO－TFT的特点，指出自对准工艺是实现高性能IGZO－TFT集成电路的关键。为此提出了一种新的自对准工艺方法。该方法的主要思路是采用氧等离子体对器件沟道区域原本含有大量氧空位的IGZO膜进行低温氧化处理，使其载流子浓度显著降低到所需范围，而源漏区仍然保持在高载流子浓度的高电导状态。而沟道与源漏区的界定由栅电极几何位置决定，从而使得栅、源漏区域自对准，所形成的寄生电容达到最小化。基于新的自对准工艺技术，本项目以移位寄存器为例，进行IGZO-TFT集成电路的设计与制备。分析和模拟表明，由于自对准工艺的显著优势，集成电路的结构可大为简化，集成度、性能和功耗指标也均能大幅提升。这些分析结果有待实验进行验证。

中文关键词： IGZO-TFT；AZO；自对准结构；双极性驱动；恒定过驱动偏置

英文摘要： The recent invention of a new oxide semiconductor material (InGaZnO,or IGZO) based thin film transistors will lead to the realization of the high-performance and low cost TFT integrated circuits. It is pointed out in this proposal that the self-alignment technology is a key to high-performance IGZO-TFT based IC in terms of the requirements of the flat panel display and IC, as well as the characteristics of IGZO-TFT.A novel self-aligned technology is thus proposed. The key idea of new technique is that using oxygen plasma to oxidize the IGZO film with high concentration of oxygen vacancy to reduce significantly the carrier concentration in the channel region. The source/drain regions are still kept in the state of the high concentration of carriers, namely high conductivity. The definition of source/drain regions and channel is up to the gate size and site. Therefore, the source/drain and channel are self-aligned to the gate well, minimizing the parasitic capacitance of the devices. On the base of the self-aligned technology, the TFT integrated circuit with a shift register as an example will be designed and fabricated. Analysis and simulation indicate that with the new self-aligned technology, the structure of the IC can be simplified much; the integration density, performance and power consumption can be improv

英文关键词： IGZO-TFT；AZO；Self-alignment structure；Bipolar driving scheme；constant over driving bias