模拟神经突触可塑性的过渡金属氧化物电阻转变效应研究

项目名称： 模拟神经突触可塑性的过渡金属氧化物电阻转变效应研究

项目编号： No.51302095

项目类型： 青年科学基金项目

立项/批准年度： 2014

项目学科： 一般工业技术

项目作者： 杨蕊

作者单位： 华中科技大学

项目金额： 25万元

中文摘要： 神经突触决定了大脑的构造，其可塑性是大脑学习记忆的基础。开发具有类神经突触性能的紧凑纳米器件是成功构建人工神经网络的基础。本项目拟采用过渡金属氧化物构建的电阻转变器件，通过精确控制氧化物薄膜的结构和组分，电极材料的优化选择制备以及外加电激励参数的控制，在单个器件中实现易失性到非易失性长时间跨度且电阻态连续可调的电阻转变性能，模拟神经突触的短时程增强，长时程增强等可塑性，获得具有类神经突触学习记忆功能的纳米器件。采用扫描透射电子显微镜原位施加电压，实时观测不同模式的阻变过程中材料局部组分、相结构的演变以及氧离子迁移过程，深入探讨阻变的物理机制。在此基础上，采用传统的半导体工艺研制开发均匀可靠的高密度类神经突触纳米器件阵列。

中文关键词： 忆阻器；电阻转变效应；过渡金属氧化物；类神经功能；突触可塑性

英文摘要： Synapses dominate the architecture of the brain. The changes in the strength of synaptic connections constitute the biological basis for learning and memory in the brain. A compact neuromorphic nanodevice with inherent leaning and memory properties emulating those of biological synapses, is the key to developing artifical neural networks rivaling their biological counterparts. In this project, the transition metal oxides (TMO), which offer compelling advantages in terms of compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication process, will be used to build resistive switching devices. To mimic short-term plasticity and long-term potentiation of biological synapse, the resistive switching and memory properties with wide time scale from volatile to permanent are expected to be achieved in the TMO-based devices through precisely and optimally controlling the component and structures of TMO thin films, selection and preparation of electrodes and parameters of external electric stimuli. And, a compact nanodevice with inherent learning and memorizing is expected to be realized to emulate the biological synapse. To elucidate different kind of resistive switching mechanisms, local component and structure changes and oxygen ion migration process during resistive switching behavior will be observed

英文关键词： Memristor；Resistive switching behavior；Transition metal oxides；Neuromorphic functions；Synaptic plasticity