可控III-V族纳米线结构生长机理和特异光电性质研究

项目名称： 可控III-V族纳米线结构生长机理和特异光电性质研究

项目编号： No.11334008

项目类型： 重点项目

立项/批准年度： 2014

项目学科： 数理科学和化学

项目作者： 陈效双

作者单位： 中国科学院上海技术物理研究所

项目金额： 325万元

中文摘要： III-V族半导体纳米线在光电子领域巨大应用潜力，使得实现高质量、特定结构、电子态可控的纳米线成为国际的热点，其动力学生长模型一直争论和电子态的控制机理仍有待探索。本项目采用实验和理论相结合研究III-V族纳米材料制备、生长机理和特异光电性质及其应用，澄清GaAs和InAs基半导体纳米线微结构的生长模型的争论，利用分子束外延技术结合Au催化和自催化探索生长GaAs和InAs基纳米线结构，实现对其生长途径的控制；建立纳米线表面钝化和掺杂结合的模型，实现其稳定的n型和p型掺杂；调节不同尺寸和构型的纳米线电子态特征，实现对载流子流动的限制、能带结构和态密度分布控制；进一步制备单纳米线的红外器件结构，在对其有效包裹支撑条件下，测量单纳米线及核壳复合结构的输运特性，揭示单纳米线的光电流响应与微结构的关系，探讨其在红外光电子器件中的应用，为获得高增益和集成的III-V半导体纳米线红外探测器件提供基础。

中文关键词： 半导体纳米线;光电子性质;催化生长;表面钝化;掺杂

英文摘要： The III-V semiconductor nanomaterials have great potential applications in the field of optoelectronics. The growth of high-quality nanowires with special structures and good physical properties has been the focus of the international researches. Although some advancements have been achieved, the growth model and its control mechanisms of electronic states are far from perfect and many challenges are still remaining to be explored. This project proposes to study the key challenges in this field including the self-assembled growth, the growth mechanisms, and the special optoelectronic properties of III-V semiconductor nanowires by combining the experimental and theoretical approaches. In order to achieve these goals and establish a solid base for exploring the application of III-V semiconductor nanowires in the field of infrared detectors, this project will focus on the following key problems. We will construct the growth model of GaAs- and InAs-based microstructures of semiconductor nanowires, and explor the growth mechanisms of GaAs- and InAs-based nanowire structures by MBE technology combined with Au catalysis and autocatalysis. Basing on the growth model, we will realize the object of controlling the growth ways of nanowires. We will establish the combined model of the surface passivation and the doping of nanowires to achieve a stable n-type and p-type doping. We will focus on the studies of electronic properties of nanowires with different scales and structures. The results will help to control the characteristics of confined carrier states and the distribution of the energy band structure and the density of states. We will further study the optoelectroni properties of GaAs- and InAs-based nanowire materials. Particularly, the experiments will be performed under the conditions of supporting for the effective coating nanowires, where we will observe the transport properties of single nanowires and core-shell composite structures. The photocurrent response of single nanowires will be obtained with light excitation. Based on the optoelectronic properties, their applications in infrared optoelectronic devices will be discussed. The results obtained through this project thus will help to reveal the growth mechanisms of III-V semiconductor nanowires, and provide solid theoretical bases for their further applications on the infrared detector field.

英文关键词： semiconductor nanowire;optoelectronic properties;catalytic growth;surface passivation;doping