基于低噪声全并行电荷累加方式的时间延迟积分型CMOS图像传感器设计研究

项目名称： 基于低噪声全并行电荷累加方式的时间延迟积分型CMOS图像传感器设计研究

项目编号： No.61504091

项目类型： 青年科学基金项目

立项/批准年度： 2016

项目学科： 无线电电子学、电信技术

项目作者： 聂凯明

作者单位： 天津大学

项目金额： 20万元

中文摘要： CMOS时间延迟积分（CMOS-TDI）图像传感器是低照度下高速扫描成像的核心器件。灵敏度和扫描速度相互制约以及信号读出噪声高是CMOS-TDI图像传感器发展的主要瓶颈。为突破瓶颈，本项目提出一种低噪声全并行电荷累加型CMOS-TDI图像传感器，并对其理论问题和关键技术展开研究，主要包括：研究传感器的工作机理和电荷累加型像素原理，建立传感器数学模型；研究一种基于电容跨阻放大器的像素结构，通过双积分电容和失调消除电容实现低噪声高效电荷累加；探索一种低噪声栅间电荷包转移型像素结构，通过对标准CMOS工艺改进，优化栅间电势分布和电荷转移通道实现低噪声高效电荷累加。完成基于以上两种像素的CMOS-TDI图像传感器设计、流片和测试分析，最终通过低噪声电荷转移型像素和全并行电荷累加方式实现高速、高灵敏度和低噪声的CMOS-TDI图像传感器，为下一代CMOS-TDI图像传感器设计提供理论指导和技术来源。

中文关键词： CMOS图像传感器；时间延迟积分；像素；模拟集成电路；模数转换器

英文摘要： CMOS Time Delay Integration (CMOS-TDI) image sensor is the core device in the application of high speed scanning imaging under low illumination condition. That high sensitivity and high scanning speed cannot be realized simultaneously, and the readout noise of the sensor is high are the major bottlenecks during the development of CMOS-TDI image sensor. To break through these bottlenecks, an architecture of CMOS-TDI image sensor based on low-noise parallel charge accumulation will be proposed in the project. Its theoretical problems and key techniques will be researched in this project, and the specific research contents include: research on the principle of charge-accumulation CMOS-TDI image sensor and establish its mathematical model; research on a kind of charge-accumulation pixel based on capacitor trans-impedance amplifier, which can realize low-noise high-efficiency charge accumulation through two integration capacitors and an offset reduction capacitor; explore a kind of charge accumulation pixel based on low-noise charge packets transferring, and optimize its potential distribution and charge transferring tunnel through adjusting standard CMOS technology to realize low-noise high-efficiency charge accumulation. The design, tape-out, test and analysis of CMOS-TDI image sensor based on these two kinds of charge-accumulation pixels will be accomplished. Finally, the CMOS-TDI image sensor with high-speed, high-sensitivity and low-noise features will be realized through low-noise charge-accumulation pixels and parallel charge-accumulation working method, and these innovation achievements will provide feasible theoretical guidance and technical source to the new design of the next generation CMOS-TDI image sensor.

英文关键词： CMOS image sensor;Time Delay Integration;Pixel;Analog IC Design;Analog to Digital Converter