InGaAs-InAs/GaSb双色红外探测材料与器件研究

项目名称： InGaAs-InAs/GaSb双色红外探测材料与器件研究

项目编号： No.61205056

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 信息四处

项目作者： 吕衍秋

作者单位： 中国空空导弹研究院

项目金额： 27万元

中文摘要： 短/中波红外双色探测器在制导武器系统有重要的应用前景，本项目开展InGaAs同质结短波和InAs/GaSb II类超晶格中波双色叠层材料与探测器探索研究，器件采用p-n-p结构，理论响应波段分别为1μm-2.7μm和3μm-5μm。着重研究以下关键科学问题：建立短/中波材料数学模型和双色探测器理论模型，包括材料和器件的设计与优化；开展材料生长机理和生长技术研究，生长出能用于器件制备均匀性高的外延材料；对材料光学和电学性质进行表征，分析材料特性与器件性能的对应关系；研究器件关键制备技术，包括反应离子刻蚀、表面钝化等；研究器件性能随温度的变化,如I-V特性、响应光谱、探测率、串音等。首次对InGaAs-InAs/GaSb短/中波红外双色叠层材料及探测器进行探索研究，该项目的顺利完成，将为红外双色探测器在国防领域应用提供新的技术途径。

中文关键词： InGaAs；InAs/GaSb；超晶格；双色；红外探测器

英文摘要： Two-colour infrared detectors of short/middle wavelength will be used in guiding weapon systems abroadly. The terrace two-colour materials and detectors with InGaAs homostructure short-wavelength and InAs/GaSb II type superlattice middle-wavelength will be researched in this project. The device is made of p-n-p structure. The response wavelengths are 1μm-2.7μm and 3μm-5μm respectively. Some scientific problems will be resolved.The mathematic model of short-wavelength and middle-wavelength materials and the academic model of two-colour device will be established, including the design and optimization of these models.The high-uniform epitaxy material used for device making will be growed by study of material growth mechanism and material growth technology. The relationship between material and device will be analyzed by measurement of material's optics and electrics properties. The key device making technologies, such as ICP etching, surface passivation, will be researched. Properties of device changing with temperature will be investigated by measurment of I-V, response spectrum, detectivity, crosstalk, and so on. We will explore the two-colour infrared materials and detectors of short/middle wavelength based on InGaAs-InAs/GaSb first time. The achievement of this project will provide a new technology approach to

英文关键词： InGaAs；InAs/GaSb；superlattice；two-colour；infrared detector