项目名称: Si基薄膜中电控磁效应的研究
项目编号: No.61306109
项目类型: 青年科学基金项目
立项/批准年度: 2014
项目学科: 无线电电子学、电信技术
项目作者: 李小丽
作者单位: 山西师范大学
项目金额: 25万元
中文摘要: 本项目拟以地壳中第二丰富且在半导体工业中居于核心位置的Si作为研究对象,采用激光分子束外延和磁控共溅射技术,通过优化实验条件和共掺浓度,制备出载流子浓度可调且具有室温铁磁性的Mn、Sb共掺的Si稀磁半导体薄膜;通过设计具有不同绝缘层的Pt层/绝缘层/Mn,Sb:Si层测试单元,在Pt层和Si层之间施加一定的偏压来调制体系的电阻、载流子浓度等电输运性质,进而对其铁磁性进行调控,从而在Si体系中实现电场方式对磁性和电输运性质的共同操控。在此基础上,进一步探究电控磁效应的机制。本项目的研究结果将为研制一种新颖的、能与半导体工业有良好兼容性的、具有低能耗的自旋电子学器件奠定一定的基础。
中文关键词: 自旋电子学;电致阻变;磁电阻;饱和磁化强度;
英文摘要: Silicon(Si) is not only abundant (its oxide is sand), but it also is the most widely used elemental semiconductor and has matured processing technology in modern electronics. Mn,Sb codoped Si films are fabricated by laser molecular beam epitaxy and magnetron co-sputtering techniques. By optimizing the experimental parameters and doping concentration, the homogeneous Mn,Sb codoped Si films with room temperature ferromagnetism and a very wide range of carrier densities are hoped to be obtained. On the base of this, the structure of Pt layer/insulator layer/Mn,Sb:Si layer with different kinds of insulators will be designed. The transport properties including resistance and carrier density, and magnetic properties such as saturation magnetization, Curie temperature are hoped to be adjusted by applying different bias voltages on Pt layer with Si layer in the structure of Pt layer/insulator layer/Mn,Sb:Si layer. Based on these experimental results, the mechanism of adjusting the magnetic and transport properties by bias voltage is also discussed. This work will pave the way towards the novel spintronics devices with low energy consumption, allowing a seamless integration with electronic circuits.
英文关键词: Spintronics;resistive switching;magnetoresistance;saturation magnetization;