快重离子辐照对GaN基超晶格中二维电子气的影响研究

项目名称： 快重离子辐照对GaN基超晶格中二维电子气的影响研究

项目编号： No.11205213

项目类型： 青年科学基金项目

立项/批准年度： 2013

项目学科： 物理学II

项目作者： 缑洁

作者单位： 中国科学院近代物理研究所

项目金额： 30万元

中文摘要： GaN基超晶格是Ⅲ族氮化物光电子器件的基本结构，其电子输运由于二维电子气(2DEG)的存在显示独特的机制。GaN基Ⅲ族氮化物半导体具有宽禁带、高载流子饱和迁移率、高热导率和耐辐照的优点，在高温和辐射环境（如核能、空间）具有广泛应用潜力。但是，核能和空间环境的快重离子由于具有大的电子能损，会在超晶格中引入潜径迹缺陷，并可在超晶格界面引发原子混合，这都会造成超晶格的二维电子气密度及迁移率发生变化。本项目针对超晶格中电子输运机制与普通外延层中电子输运机制不同的特点，基于HIRFL提供的快重离子条件，研究快重离子入射引起的强电离激发效应对超晶格中电子输运行为的影响，重点探讨重离子潜径迹的形成和界面间的原子混合对超晶格束缚的二维电子气的影响，建立电子输运行为对缺陷微观结构的依赖关系，寻找电子输运性质发生显著变化的辐照参数阈值，为GaN基光电子器件在辐照环境下的应用提供基础研究的依据。

中文关键词： 快重离子；GaN；电学性质；损伤；异质结

英文摘要： GaN-based supperlattice is the basic structure of group III nitrides optoelectric devices. Its electron transport properties showed specific mechanics because of the two-dimentional electron gas (2DEG).GaN-based group III nitrides have the advantages of wide band gap, high saturation velocity of the charge carriers, high thermal conductivity and high radiation hardness. They have extensively application potential for use in the high temperature and radiation environment(such as nuclear power and space technology). However, the swift heavy ions in the radiation environments can introduce the latent tracks in the supperlattice because of large electronic energy loss, and can cause the atomic mixing of the interface of the supperlattice. The irradiation can create changes in the density and the mobility of the two-dementional electron gas in the supper lattices. This project, based on the understanding of the differece of the electron transport mechanics in supperlattices and in epitaxial films, using swift heavy ions provided by HIRFL, plans to investigate the response of the electron transport in the supperlattice due to high electroninc enenrgy loss of the swift heavy ion irradiation, to focus on the impact of the formation of the latent tracks and atomic mixing at the interface to the 2DEG bounded by the suppe

英文关键词： Swift heavy ion；GaN；Electrical properties；Damage；Heterojunction